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Enabling higher yield on GaN wafers for Power, RF and MicroLED applications using Candela®
GaN hetero-epitaxy layer grown on substrates like Silicon, Silicon Carbide and Sapphire, is often very defective due to lattice mismatch between the substrate and epitaxy layers and complex epitaxy growth process. This webinar would provide an insight into critical GaN defects, their impact on device performance and how Candela® technology provides a solution for enhancing yield on GaN wafers by detecting these critical sub-micron defects.

May 27, 2021 08:00 AM in Pacific Time (US and Canada)

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